Optical waveguide modulator

ABSTRACT

A multi-section optical modulator and related method wherein two waveguide arms traverse a plurality of successive modulating sections. A differential drive signal is applied separately to each waveguide arm of each modulating sections in synchronism with the transmission of light along the waveguide arms, effecting a dual differential driving of each section. By suitably selecting the number of modulating sections and the section length, a high modulation bandwidth and a high modulation efficiency may be achieved simultaneously for a given peak-to-peak voltage swing of the drive signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/602,657, filed May 23, 2017, now allowed, which is herebyincorporated by reference herein in its entirety.

TECHNICAL FIELD

The present invention generally relates to optical modulators and, moreparticularly, to a broad-band optical waveguide modulator with segmentedelectrodes configured for dual-differential driving.

BACKGROUND

Broad-band optical communications typically require high-speedelectro-optical modulators (EOM) to modulate light at a desired datarate. One common type of a broad-band EOM is a Mach-Zehnder modulator(MZM) that uses a waveguide Mach-Zehnder (MZ) interferometric structurewith RF-driven optical phase modulators in each arm. The waveguide armsof the MZM are typically formed in an electro-optic material, forexample a suitable semiconductor or electro-optic material such asLiNbO₃, where optical properties of the waveguide may be controlled byapplying a voltage. Such a waveguide modulator may be implemented in anopto-electronic chip as a photonic integrated circuit (PIC). A siliconphotonics (SiP) platform based on Silicon on Insulator (SOI) technologymay be particularly attractive for implementing broad-band modulators asit enables a natural integration with CMOS-based high-speed electronicdrivers.

One common technique to high-speed modulation of propagating light, inparticular at modulation rates on the order of 10-20 Gigabit per second(Gb/s) and higher, is the travelling wave approach, when the modulatingelectrical RF signals are applied to properly terminated electricaltransmission lines that are electro-optically coupled andvelocity-matched to the optical waveguides of the EOM. FIG. 1schematically illustrates an example broad-band EOM in the form of anMZM 10 with two waveguide arms 11, 12 coupled to two electricaltransmission lines 30 of length L, each formed by an inner electrode 22and an outer electrode 21 with a transmission line termination 25. Inthe SiP platform, the electrodes 21, 22 may be overlaying p/n junctionsformed across the waveguide arms that may either inject carriers(forward bias) or deplete carriers (reverse bias) in the waveguide coreto modulate the refractive index of the waveguide by means of thecarrier plasma dispersion effect. A common approach is to have the innerelectrodes 22 connected to the ground, and to use a differential RFsignal to drive the outer electrodes 21, so as to effectively double thephase modulation amplitude at the output combiner for a givenpeak-to-peak (PP) drive voltage Vpp applied to each electrode. In onecommon implementation, the transmission lines 30 modulate reverse-biasedPN junctions formed along the length of the line, which modulate thelight that is travelling in the waveguide arms 11, 12 at the samevelocity as the RF signals propagating in the transmission lines 30.

Such traveling-wave modulators however present a design trade-off:increasing the length of the transmission lines in the EOMs improves theoptical eye opening at the output of the modulator, but reduce themodulator bandwidth and increases the size of the modulator. The opticaleye opening at the output of the modulator may be expressed in terms ofthe optical modulation amplitude (OMA), which may be defined as thedifference in optical power between the “ON” and “OFF” levels for theOn-Off-Keyed (OOK) modulation. Thus, designing EOMs having asufficiently high OMA at a target bandwidth remains a challenge.

Accordingly, it may be understood that there may be significant problemsand shortcomings associated with current solutions and technologies forproviding high-bandwidth optical waveguide modulators with a suitablylow OMA loss.

SUMMARY

Accordingly, the present disclosure relates to an optical waveguidemodulator comprising: an input optical port for receiving input light,an output optical port for outputting modulated light; first and secondwaveguide arms extending optically in parallel between the input andoutput optical ports to guide the input light from the input port to theoutput port along two light paths, a plurality of N modulatingsubsystems sequentially disposed along the first and second waveguidearms, wherein N≥2, and a plurality of N electrical drive circuits forindividually driving the N modulating subsystems, each of the N electricdrive circuits configured to provide a differential drive signal to eachof the first and second waveguide arms of one of the N modulatingsubsystems. Each modulating subsystem may comprise a first pair ofelectrodes disposed along a length portion of the first waveguide arm atopposite sides thereof so as to be electro-optically coupled thereto,and a second pair of electrodes disposed along a length portion of thesecond waveguide arm at opposite sides thereof so as to beelectro-optically coupled thereto, with each of the N electric drivecircuits electrically coupled to each electrode of the first and secondpairs of electrodes of one of the N modulating subsystems fordifferentially driving both the first and second pairs of electrodes ofsaid modulating subsystem separately from other modulating subsystems.

According to an aspect of the present disclosure, the modulator maycomprising a substrate comprising semiconductor material wherein thefirst and second waveguide arms and the plurality of N modulatingsubsystems. Each of the N modulating subsystems may comprise a first p/njunction formed in the length portion of the first waveguide arm andelectrically connected between the first pair of electrodes, and asecond p/n junction formed in the length portion of the second waveguidearm and electrically connected between the second pair of electrodes.Each of the first and second p/n junctions may be configured to vary arefractive index in the respective length portion of the first or secondwaveguide arm in response to the differential drive signal provided tothe corresponding first or second pair of electrodes. In oneimplementation each of the N electrical drive circuits may comprise twodifferential drivers that are DC-coupled to the first and second pairsof electrodes of one of the N modulating subsystems, the twodifferential drivers configured to convert an input data signal into twosynchronous differential drive signals having a DC shift therebetween.

In accordance with an aspect of the present disclosure, the plurality ofN electrical drive circuits may comprise an equalizing circuitconfigured to drive one of the N modulating subsystems, termed anequalizing subsystem, with a differential drive signal that is invertedrelative to at least one other differential drive signal that isprovided to at least one other modulating subsystem from the pluralityof N modulating subsystems, thereby affecting a modulation of the inputlight that subtracts from a modulation of the input light by the atleast one other modulating subsystem with a relative time delay that isselected so as to at least partially compensate for a modulation signaldispersion associated with a high-frequency roll-off of a lightmodulation efficiency of the modulating subsystems.

Another aspect of the present disclosure relates to a method ofmodulating input light, the method comprising:

a) receiving the input light into an input optical port of an opticalmodulator comprising first and second waveguide arms extending opticallyin parallel between the input optical port and an output optical port,for transmitting the input light from the input port to the output portalong two light paths traversing N successive modulating sections of theoptical modulator, N≥2;

b) providing a differential drive signal separately to each of theplurality of N successive modulating sections of the optical modulatorgenerally in synchronism with the transmission of the input light alongthe waveguide arms; and,

c) in each of the N modulating sections, applying the differential drivesignal, or a signal related thereto, separately to each of the first andsecond waveguide arms.

The method may include converting an input data signal into Ndifferential drive signals that vary with time in a substantially samemanner defined by the input data signal. Step (c) may comprise: in atleast one of the N modulating sections, applying one of the Ndifferential drive signals to a first pair of electrodes disposed withina respective modulating section so as to be electro-optically coupled tothe first waveguide arm along a length portion thereof located withinsaid modulating section, and applying an inverted version of the one ofthe N differential drive signals to a second pair of electrodes disposedwithin said modulating section so as to be electro-optically coupled tothe second waveguide arm along a length portion thereof located withinsaid modulating section, so as to affect a dual-differential push-pullmodulation of the input light in each of the N successive modulatingsections of the optical modulator.

An aspect of the present disclosure relates to a method of modulatinginput light wherein the plurality of N modulating sections comprises amodulating section and an equalizing section, the method furthercomprising converting an input data signal into first and seconddifferential drive signals that vary with time in a substantially samemanner defined by the input data signal. The method may further compriseapplying, in the modulating section, the first differential drive signalto a first pair of electrodes electro-optically coupled to the firstwaveguide arm within the first modulating section, and applying aninverted version of the first differential drive signal to a second pairof electrodes electro-optically coupled to the second waveguide armwithin the first modulating section, so as to affect a firstdual-differential push-pull modulation of the input light propagatingthrough the first modulating section of the optical modulator. Themethod may further include applying, in the equalizing section, aninverted version of the second differential drive signal from theplurality of N differential drive signals to a first pair of electrodeselectro-optically coupled to the first waveguide arm within theequalizing section, and applying the second differential drive signal toa second pair of electrodes electro-optically coupled to the secondwaveguide arm within the equalizing section, so as to affect a seconddual-differential push-pull modulation of the input light propagatingthrough the equalizing section of the optical modulator. The seconddual-differential push-pull modulation substantially subtracts from thefirst dual-differential push-pull modulation with a relative delaytherebetween that is selected so as to at least partially compensate fora modulation dispersion associated with a high-frequency roll-off of alight modulation efficiency of the modulating subsystems.

An aspect of the present disclosure relates to an optical waveguidemodulator comprising an input optical port for receiving input light, anoutput optical port for outputting modulated light, first and secondwaveguide arms extending optically in parallel between the input andoutput optical ports to guide the input light from the input port to theoutput port along two light paths, and first and second p/n junctionformed in the first and second waveguide arm, respectively. Each of thefirst and second p/n junctions is provided with a cathode electrodeelectrically connected to the n-side of said p/n junction and an anodeelectrode electrically connected to the p-side of said p/n junction. Anelectrical drive circuit is further provided that is configured fordual-differential driving the first and second p/n junctions; theelectrical drive circuit comprises two differential drivers that areconfigured to convert an input data signal, or a signal obtainedtherefrom, into two synchronous differential signals having a DC shifttherebetween, wherein each of which is DC-coupled to the cathodeelectrode of one of the p/n junctions and the anode electrode of theother one of the p/n junctions.

An aspect of the present disclosure relates to an optical waveguidemodulator comprising an input optical port for receiving input light, anoutput optical port for outputting modulated light, first and secondwaveguide arms extending optically in parallel between the input andoutput optical ports to guide the input light from the input port to theoutput port along two light paths, and first and second p/n junctionformed in the first and second waveguide arm, respectively. Each of thefirst and second p/n junctions is provided with an anode electrodeelectrically connected to the p-side of said p/n junction, with then-side of said p/n junction connected to a ground plane. Each of theanode electrodes may form an electrical transmission line with theground plane. The optical waveguide modulator may further comprise adifferential driver that is configured to be fed with a negative supplyvoltage is DC-coupled to the anode electrodes of each of the first andsecond p/n junctions to apply complementary single-ended signals theretofor affecting a push-pull modulation of the input light. Each of theanode electrodes may be terminated with a resistor connection to theground plane.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments disclosed herein will be described in greater detail withreference to the accompanying drawings which represent preferredembodiments thereof, in which like elements are indicated with likereference numerals, and wherein:

FIG. 1 is a schematic block diagram of a travelling-wave waveguideMach-Zehnder modulator;

FIG. 2 is a schematic diagram of an optical modulator with segmentedelectrode system and a dual-differential drive circuit for eachelectrode subsystem, with outer electrodes connected to receive a samesingle-ended signal complimentary to that received by the innerelectrodes;

FIG. 3 is a schematic expanded view of a portion of a waveguide arm ofone embodiment of the modulator of FIG. 2 with a modulating p/njunction;

FIG. 4 is a graph illustrating the modulation bandwidth as a function ofelectrode length for a Silicon-based modulator;

FIG. 5 is a schematic diagram of a photonics chip of an embodiment ofthe optical modulator of FIG. 2 showing electrical contacts anddifferential signal paths for driving each modulating section, withinterconnected outer electrodes and interconnected inner electrodes ineach section driven by complimentary single-ended signals;

FIG. 6 is a schematic diagram of a driver chip for operating with thephotonics chip of FIG. 5;

FIG. 7 is a schematic diagram of another embodiment of an opticalmodulator with segmented electrode system and a dual-differential drivecircuit for each electrode subsystem, in which outer electrodes areconnected to receive complimentary single-ended signals;

FIG. 8 is a schematic diagram of a photonics chip of an embodiment ofthe optical modulator of FIG. 7 showing electrical contacts anddifferential signal paths for driving each modulating section, with eachinner electrode electrically coupled to a different outer electrode ofthe modulating section;

FIG. 9 is a diagram showing a schematic plan view of an examplemodulating section of an EOM and a block diagram of a dual-differentialdriving circuit with differential drivers according to one embodiment;

FIG. 10 is a schematic diagram of an optical modulator with segmentedelectrode system formed of four or more short electrode segments withouttermination;

FIG. 11 is a schematic diagram of electrical driving circuitry of themodulator of FIG. 1 with a common pre-equalizer;

FIG. 12 is a graph schematically illustrating a high-frequencypre-emphasis provided by the pre-equalization circuit;

FIG. 13 is a schematic diagram of electrical driving circuitry of themodulator of FIG. 1 with a pre-equalizer in the driving circuit of eachelectrode subsystem;

FIG. 14 is a simplified circuit diagram of a linear differential driverwith a pre-equalization stage;

FIG. 15A is a simplified diagram of an electrical drive circuit of oneelectrode segment;

FIG. 15B is a diagram of a simplified equivalent electrical circuit ofthe driver circuit of FIG. 15A;

FIG. 16 is a schematic diagram of a sectionalized optical modulator withan equalization section;

FIG. 17 is a schematic diagram illustrating a plan view of an equalizingsection EQ of the EOM of FIG. 16 and a block diagram of its drivingcircuitry according to an embodiment wherein the modulating sections aredriven as illustrated in FIG. 9; the outputs of each of the differentialdrivers in the EQ driving circuit are inverted as compared to theiroutputs in the driving circuit of a modulating sections of the same EOMillustrated in FIG. 9;

FIG. 18 is a schematic diagram of an example electrical circuit that maybe used to implement a dual differential driver with DC shifteddifferential outputs;

FIG. 19 is a graph illustrating the DC-shifted dual-differential outputsproduced by the dual differential drivers of FIGS. 9, 17, and 18;

FIG. 20 is a schematic diagram illustrating an EOM withground-terminated anode electrodes DC coupled to a negative-voltagedifferential driver and ground-referenced cathode electrodes of the p/njunctions.

DETAILED DESCRIPTION

In the following description, for purposes of explanation and notlimitation, specific details are set forth, such as particular circuits,circuit components, techniques, etc. in order to provide a thoroughunderstanding of the present invention. However, it will be apparent toone skilled in the art that the present invention may be practiced inother embodiments that depart from these specific details. In otherinstances, detailed descriptions of well-known methods, devices, andcircuits are omitted so as not to obscure the description of the presentinvention. All statements herein reciting principles, aspects, andembodiments of the invention, as well as specific examples thereof, areintended to encompass both structural and functional equivalentsthereof. Additionally, it is intended that such equivalents include bothcurrently known equivalents as well as equivalents developed in thefuture, i.e., any elements developed that perform the same function,regardless of structure.

Furthermore, the following abbreviations and acronyms may be used in thepresent document:

CMOS Complementary Metal-Oxide-Semiconductor

BiCMOS Bipolar CMOS

GaAs Gallium Arsenide

InP Indium Phosphide

LiNbO3 Lithium Niobate

PIC Photonic Integrated Circuits

SOI Silicon on Insulator

SiP Silicon Photonics

PSK Phase Shift Keying

BPSK Binary Phase Shift Keying

QAM Quadrature Amplitude Modulation

QPSK Quaternary Phase Shift Keying

RF Radio Frequency

DC Direct Current

AC Alternate Current

OSNR Optical Signal to Noise Ratio

Note that as used herein, the terms “first”, “second” and so forth arenot intended to imply sequential ordering, but rather are intended todistinguish one element from another, unless explicitly stated.Similarly, sequential ordering of method steps does not imply asequential order of their execution, unless explicitly stated. The word‘using’, when used in a description of a method or process performed byan optical device such as a polarizer or a waveguide, is to beunderstood as referring to an action performed by the optical deviceitself or by a component thereof rather than by an external agent.Notation Vπ refers to a bias voltage of a Mach-Zehnder modulator (MZM)that corresponds to a change in a relative phase delay between arms ofthe MZM by π radian (rad), or 180 degrees, which corresponds to a changefrom a minimum to a next maximum in the MZM transmission versus voltage.Radio frequency (RF) may refer to any frequency in the range fromkilohertz (kHz) to hundreds of gigahertz (GHz). The term p/n junctionencompasses p/i/n junctions having a region of substantially intrinsicconductivity located between the p-doped and n-doped regions. The term“differential signal” refers to a signal that is transmitted using twosingle-ended signals having complementary AC components. The term“inverted differential signal” refers to a differential signal having ACcomponents of its constituent single-ended signals inverted relative tothose of a reference differential signal, or a differential signalhaving high-low and low-high transitions switched.

The present disclosure relates to an electro-optic modulator (EOM) and arelated method in which two or more optical waveguides, also referred toherein as the waveguide arms, are used to guide input light from aninput optical port to an output optical port along two or more opticalpaths; such EOMs may also be referred to herein as an optical waveguidemodulator or as an optical modulator. One aspect of the presentdisclosure relates to a multi-section EOM wherein the optical pathstraverse N successive modulating sections of the optical modulator, N≥2,or preferably N≥3 in at least some embodiments. An electrical drivecircuit is used to provide a differential drive signal separately toeach of the N successive modulating sections of the EOM generally insynchronism with the transmission of the input light along the waveguidearms, and to apply the differential drive signal, or a signal relatedthereto, separately to each of the waveguide arms. In some embodiments,one or more of the modulating sections may be driven by inverteddifferential signals so as to operate as an equalizing section orsections. The EOM may include multiple electrodes that are disposed tomodulate the light propagating in the waveguide arms in response to anapplied electrical drive signal. The electrodes are arranged in aplurality of N electrode subsystems that are sequentially disposed alongthe direction of light propagation, so that each of the electrodesubsystems defines one of the N consecutive modulating sections of theEOM. In example embodiments described hereinbelow the EOM is in the formof, or includes, an MZM, and each of the modulating sections includestwo electrode pairs, each electrode pair sandwiching a length portion ofone of the waveguide arms so as to be electro-optically coupled thereto.The EOM thus may include 4N separate electrodes, which may bedual-differentially driven using N electric drive circuits, eachconfigured to provide a differential drive signal to each of the twoelectrode pairs of one of the N modulating sections. The N electricdrive circuits may be configured to convert an input data signal into Ndifferential drive signals that vary with time in a substantially samemanner defined by the input data signal. By suitably selecting theelectrode length of each of the modulating sections and the number ofthe modulating sections, a target modulation bandwidth may be achievedsimultaneously with a target OSNR, or a target OMA for OOK modulation,or a target output power for a BPSK modulation.

In accordance with an aspect of the present disclosure, exampleembodiments of the EOM described hereinbelow may implementdual-differential driving of each of the modulating sections of the EOM,which may include, for at least one of the modulating sections, applyingone of the N differential drive signals to a pair of electrodessandwiching a length portion of the first waveguide arm within themodulating section, and applying an inverted version of the one of the Ndifferential drive signals to a second pair of electrodes sandwiching acorresponding length portion of the second waveguide arm located withinthe modulating section, so as to affect a dual-differential push-pullmodulation of the input light in each of the N successive modulatingsections of the EOM.

With reference to FIG. 2, there is illustrated an embodiment of amulti-section EOM 100 which includes N=3 modulating subsystems by way ofexample; it will be appreciated that other embodiments may include adifferent number of sections, so that N can vary from two to ten andmore. The multi-section EOM 100, and modifications thereof illustratedin FIGS. 7, 10, 11, 13, 16 may also be referred to as an opticalwaveguide modulator, or simply as the modulator device. The EOM 100includes an MZM 110 having an input optical port 103, an output opticalport 104, first and second waveguide arms 101 and 102, and 4N=12separate electrodes arranged to form three modulating subsystems 121 ₁,121 ₂, and 121 ₃, which may be generally referred to as the modulatingsections 121 of the EOM 100. The modulating sections 121 aresequentially disposed one after another in the direction of lightpropagation from the input optical port 103 of the MZM 110 to its outputoptical port 104. The waveguide arms 101, 102 traverse the modulatingsections 121 ₁, 121 ₂, and 121 ₃ in sequence. Each of the modulatingsections 121 includes a first pair of electrodes 111, 112 disposed alonga length portion 115 of the first waveguide arm 101 at opposite sidesthereof, i.e. sandwiching a length portion 115 of the first waveguidearm 101 so as to be electro-optically coupled thereto. Each of themodulating sections 121 further includes a second pair of electrodes113, 114 disposed along a length portion 116 of the second waveguide arm102 at opposite sides thereof sandwiching a corresponding length portionof the second waveguide arm 102 and being electro-optically coupledthereto. The four electrodes 111-114 within each of the modulatingsection 121 may be referred to as the electrode subsystem 121. The term“electro-optically coupled” in the context of this disclosure means thata suitable voltage applied across the electrode pair changes therefractive index or any other optical property in the length portion ofthe waveguide arm between the two electrodes of the pair, for example bymeans of inducing an electrical field or an electrical current flowacross the waveguide, or by changing the concentration of free carrierstherein.

In one embodiment each of the first and second pairs of electrodes(111,112) and (113,114) in each modulating subsystem 121 may constitutea coplanar transmission line that is differentially driven from one endand is terminated at the other end with a suitable line termination 117so as to suppress back reflections.

The electrodes 111 and 114 of each of the modulating sections 121 mayalso be referred to as the outer electrodes, and the electrodes 112 and113—as the inner electrodes. Each electrode 111, 112, 113, or 114 of anyone of the N electrode subsystems 121 is spaced apart from theelectrodes of the adjacent modulating section 121 so that each of themodulating sections 121 can be dual-differentially driven separatelyfrom other modulating sections, as described hereinbelow. The electrodes111-114 of all three modulating subsystems 121 together can be viewed asseparate segments of four non-contiguous electrodes extending along mostof the length of the two waveguide arms, and may be referred to as theelectrode segments. In the illustrated embodiment each of the electrodes111, 112, 113, and 114 is of a substantially same length l, but in otherembodiments the electrode length may differ from one modulating section121 to another. The MZM 110 may also include one or more bias electrodeswhich are not shown in FIG. 2 in order not to obscure the drawing andits description.

In one embodiment, the waveguides of the MZM 110 and the plurality ofelectrodes 111-114 are formed in or upon a same face of a substrate 99that may be made with an electro-optic and/or semiconductor material.The term substrate as used herein encompasses multi-layer structuresalso known as wafers. In one embodiment, the substrate 99 may be madewith a semiconductor material, such as for example Silicon (Si), GaAsbased, or InP based, or any other suitable semiconductor. In oneembodiment, the substrate 99 may be made of a suitable electro-opticmaterial such as but not exclusively LiNbO3. The substrate 99 may alsobe referred to herein as the first substrate or the first wafer.

In one embodiment the substrate 99 is a SOI substrate or wafer, with thewaveguides forming the MZM 110 having their cores defined in a siliconlayer of the SOI substrate 99. In one embodiment a p/n junction orjunctions may be formed across each of the waveguide arms 101, 102 intheir length portions 115 between the respective electrodes, asschematically illustrated in FIG. 3 showing a p/n junction 191 in asection of the first waveguide arm 101 by way of example. The p/njunction enables to modulate the refractive index in the waveguide byvarying the concentration of free charge carriers therein in response toan applied voltage, thereby forming an optical phase modulator in thewaveguide. In one embodiment the p/n junction 191 may be reversed-biasedto operate as a carrier depletion based high-speed phase modulator(HSMP). In some embodiment the p/n junction 191 may be in the form of aPIN junction, with an intrinsic (I) region in the middle of thewaveguide core sandwiched between a P-doped and an N-doped regions. Itwill be appreciated that a waveguide MZM with p/n junction based HSPMsin its arms may also be formed in semiconductor materials other than Si,and corresponding embodiments of the EOM 100 are within the scope of thepresent disclosure.

Turning back to FIG. 2, the EOM 100 may further include a plurality ofdifferential drivers 150 for separately driving each of the modulatingsection 121 with a respective differential drive signal 151 ₁, 151 ₂, or151 ₃, and electrical drive circuitry configured so that each MZM arm101, 102 in each of the modulating sections 121 can be differentiallydriven separately from other modulating sections. As illustrated in FIG.2, this circuitry may include differential electrical signal pathways123 connecting the first and second pairs of electrodes (111, 112) and(113, 114) in each of the modulating sections 121 to a correspondingdifferential driver 150, so that an i^(th) modulating section 121 _(i)is driven by an i^(th) differential drive signal 151 _(i), i=1, 2, or 3.Although illustrated as continuous, in some embodiments the electricalsignal pathways 123 may be configured to provide AC coupling of thedifferential drive signals 151 _(i), or selected single-ended componentsthereof, to some or all of the electrodes 111-114, for example byincluding one or more capacitors. The electrical signal pathways 123 maybe formed at least in part upon the same substrate as the electrodes111-114, or may be provided on a separate driver chip. In someembodiments the electrical driving circuit of the EOM 100, whichincludes the differential drivers 150 and an input feed circuit 145, maybe implemented in part or in full on the same substrate 99 as thewaveguides 101, 102 and the electrodes 111-114. In some embodiments anadditional DC bias voltage may be provided to one of the electrodes ineach electrode pair 111, 112 and 113, 114 from a DC bias source (notshown in FIG. 2). In some embodiments one or more of the electricaldrive circuits that connect to each of the electrode subsystems 121 mayinclude two differential drivers configured to generate twocomplementary pairs of single-ended signals for differentially drivingthe first pair of electrodes (111, 112) and the second pair ofelectrodes (113, 114), for example as described hereinbelow withreference to FIGS. 9, 17, and 18. The term ‘differential signal’ isunderstood herein to mean a signal formed by two single-ended electricalsignals having complementary AC components. The differential drivesignals 151 ₁, 151 ₂, and 151 ₃, which may generally be referred to asthe differential signals 151, may be characterized by a peak-to-peakvoltage swing Vpp. In one embodiment Vpp=2V_(max), where Vmax is apeak-to-peak voltage swing of each of the complimentary single-endedsignals forming the differential drive signal 151.

The EOM 100 may further include an electrical input port 141 configuredto receive an input data signal 13, and an input feed circuit 145 thatconnects the electrical input port 141 to each of the electrical drivers150. Each of the N electrical drivers 150 may be configured to convertthe input electrical data signal 13 into the respective differentialdrive signal 151 _(i), i=1, . . . , N, which is then provided to each ofthe electrode pairs (111,112) and (113,114). In one embodiment thedifferential drivers 150 are linear, in the sense that their outputs arelinear functions of their inputs. In one embodiment, each of thedifferential drivers 150 _(i) may be configured to have an independentlyadjustable gain so as to output the differential drive signal 151 _(i)with an independently adjustable amplitude.

In some embodiments the input feed circuit 145 may further be configuredto provide the input data signal 13 to each of the N differentialdrivers 150 with a different time delay Δt_(i), which may be selected soas to synchronize the provisioning of the differential electrical drivesignals 151 _(i) to the consecutive modulating sections 121 with thepropagation of the input light 11 along the first and second waveguidearms 101, 102. In one embodiment the input feed circuit 145 may includeone or more, for example (N−1), delay lines 140 to provide the desiredtime delays Δt_(i) in the delivery of the input data signal 13 to therespective differential drivers 150, and further to the modulationsections 121 in the form of the respective differential drive signals151 _(i). In one embodiment, the delay lines 140 may be independentlyadjustable.

Turning now to FIG. 4, there is illustrated an example dependence of amodulation bandwidth of an MZM formed in a SiP chip with depletion-modeHSPMs upon the electrode length l. At high frequencies the pairs ofelectrodes sandwiching the modulator's arms each form a transmissionline along which the modulating drive signal 151 propagates. Due toparasitic resistance and capacitance associated with the transmissionline, the longer the drive signals has to travel along the transmissionline formed by the modulator's electrodes, the smaller is the attainablemodulation bandwidth of the MZM. These parasitic resistance andcapacitance in the illustrated example of a SiP EOM originate primarilyfrom the reversed-biased p/n junction forming the HSPM, but may have adifferent origin in other embodiments. The modulation bandwidth (BW) ofa SiP EOM driven using a single-segment transmission line may beestimated as

$\begin{matrix}{{BW} \propto \sqrt{\frac{1}{C_{pn}R_{pn}Z_{O}L}}} & (1)\end{matrix}$where C_(pn) and R_(pn) are the parasitic capacitance and resistance ofthe reverse-biased PN junctions, Zo and L are the characteristicimpedance and length of the transmission lines. By way of example, atarget modulation bandwidth of 35 GHz may require the length l of theelectrodes to be no more than 1 mm for an example EOM of FIG. 4 embodiedwith silicon waveguides and depletion-mode p/n junction HSPMs. However,efficient modulation of the propagating light with a target peak-to-peakvoltage Vpp may require a substantially greater electro-opticinteraction length in the waveguide arms. Advantageously, by using twoor more separate electrode subsystems 121 of suitably small length ldisposed one after another along the waveguide arms, both the targetmodulation bandwidth and a maximum attainable OSNR level at themodulator output may be simultaneously achieved. Accordingly, in oneembodiment the length l of the electrodes 111-114 may be selected basedon the target modulation bandwidth, and the number N of the electrodesubsystems 121 in the optical modulator 100 may be selected based on apeak-to-peak voltage Vpp that is available from the differential drivers150 and a target modulation efficiency, or a target OSNR level at theoutput of the modulator.

Furthermore, by driving each of the electrode pairs 111, 112 and 113,114 in each of the electrode sub-systems 121 with a respectivedifferential signal 151, the modulation efficiency of each of themodulating sections 121 may be substantially enhanced for the samepeak-to-peak voltage swing Vpp in the differential signal 151, ascompared to the conventional MZM driving scheme of FIG. 1 wherein theinner electrodes are grounded so that each of the waveguide arms ismodulated with a single-ended signal. Advantageously, with thedual-differential driving of each of the electrode subsystems 121 asillustrated in FIG. 2, a two times smaller peak-to-peak voltage Vpp maybe used to produce the same modulation of the refractive index in eachof the waveguide arms as compared to the MZM of FIG. 1.

In some embodiments it may be desirable to keep the peak-to-peak voltageVpp=2Vmax of the differential drive signal 151 below a specific value.In some embodiments, Vpp may be limited by the peak-to-peak voltage Vmaxof each single-ended component of the differential drive signal 151 thatis available from the drive electronics. By way of example, inembodiments wherein the differential drivers 150 are fabricated usingthe BiCMOS technology, Vmax may be limited by a breakdown voltage of aSi-based NPN transistor, which is about 1.8V and thus may necessitateusing Vmax smaller than 1.8V, for example 1.5V, yielding a maximumattainable Vpp of about 3V to 3.5V. Advantageously, thedual-differential driving scheme of the type illustrated in FIG. 2 orFIG. 9 described hereinbelow enables to obtain a same modulationefficiency with a two times smaller total length of the electrodes L=N·lfor a given Vpp value, as compared to the differential driving scheme ofFIG. 1.

In some embodiments, both the Vpp and L may be limited by requirementson the EOM design so that the modulation efficiency that is achievablefrom the EOM is less than theoretically possible; this may be understoodby noting that the modulation efficiency of an MZM is a function of aratio k=Vpp/Vπ of the peak-to-peak voltage Vpp of the differential drivesignal to the Vπ voltage of the MZM, which is generally inverselyproportional to the total electrode length L. The term “modulationefficiency” may refer to the optical modulation amplitude (OMA) in caseof the OOK modulation when the MZM may be biased at a mid-point of itstransmission characteristic, or to the optical power of BPSK modulatedlight at the modulator output in case of the BPSK modulation, when themodulator is biased at a transmission minimum. It can be shown that forthe OOK modulation the maximum modulation efficiency is achieved forVpp=Vπ for the differential drive scheme of FIG. 1, and for Vpp=Vpi/2for the dual differential modulation as illustrated in FIG. 2. ForVpp/Vπ smaller than about 0.4, the dual-differential modulation yieldsan improvement in modulation efficiency of 2-3 dB. For the BPSKmodulation the maximum modulation efficiency is achieved for Vpp=2Vπ forthe differential drive scheme of FIG. 1, and for Vpp=Vπ for the dualdifferential modulation as illustrated in FIG. 2. For Vpp/Vπ smallerthan about 0.5, the dual-differential modulation yields an even greaterimprovement in modulation efficiency of 5-6 dB.

By way of example, an embodiment of the modulator device 100 with theMZM formed in a SiP chip with depletion-mode HSPMs, three electrodesubsystems 121, and the electrode length l of 1 mm in each subsystem121, and the dual-differential driving with Vpp=2Vmax=3V provides a 35GHz bandwidth at an optimum OSNR.

Turning now to FIGS. 5 and 6, there is schematically illustrated anexample photonics chip 301 wherein the MZM 110 and three electrodesubsystems 121 _(i), i=1, 2, . . . , 3, are formed upon a firstsubstrate 99, with the differential drivers 150 formed upon a secondsubstrate 88. Referring first to FIG. 5, in the illustrated embodimenteach of the modulating subsystems 121 further includes a first contactterminal 131 and a second contact terminal 132, and electrical signalpaths 137 that connect the first contact terminal 131 to one electrodeof each of the first pair of electrodes (111, 112) and the second pairof electrodes (113, 114), and which further connect the second contactterminal 132 to the other electrode of each of the first and secondpairs of electrodes (111, 112) and (113, 114). The pair of contactterminals 131, 132 function as a differential input port from which adifferential drive signal 151 may be fed to each of the first and secondpairs of electrodes (111, 112) and (113, 114). In the illustratedembodiment, the first contact terminal 131 in each modulating subsectionis connected to the outer electrodes 111 and 114, while the secondcontact terminal 132 is connected to the inner electrodes 112, 113. Thecontact terminals 131, 132 may be embodied in a variety of ways thatenable electrical connections between the photonics chip 301 and thedriver chip 302, including but not limited to metalized contact pads,bond wires, or metal pillars.

Referring to FIG. 6, a modulator driver chip 302 that is configured tooperate with the photonics chip 301 may include the plurality ofdifferential drivers 150 i, i=1, . . . , N, one for each of the Nmodulating sub-sections 121 of the photonics chip 301, each of whichconfigured to generate a differential drive signal 151 at a differentialoutput port formed by a pair of contact terminals 171, 172. The driverchip 302 may further include an input signal port (not shown) forreceiving an electrical data signal 13 as illustrated in FIG. 2, and afeed circuit (not shown) to provide the received data signal to thedifferential drivers 150 i, as described hereinabove with reference toFIG. 2.

When the chips 301, 302 are assembled together, for example using hybridintegration, the N pairs of contact terminals 171, 172 of the driverchip 302 are electrically connected to the respective N pairs of inputcontact terminals 131, 132, for example by flip-chip mounting or wirebonding, so as to provide the differential drive signals 151 i from eachof the N electric drive circuits 150 i to each of the first and secondpairs of electrodes (111,112) and (113,114) of the respective modulatingsubsystem 121 of the photonics chip 301.

By way of example, the photonics chip 301 may be a SiP chip with thefirst substrate 99 in the form of a SOI substrate or wafer, and thedriver chip 302 may be a CMOS or BiCMOS chip flip-chip mounted on top ofthe SiP chip 301 so that the contacts terminals 131, 132 of each of thethree modulating sections 121 are in direct contact with the respectivecontact terminals 171, 172 of the corresponding driver 150 of the driverchip 302, for example using metal pillars.

FIGS. 2 and 5 illustrate example EOM embodiments wherein the outerelectrodes 111, 114 within each modulating subsystem 121 areelectrically connected to each other and may also be connected to afirst contact terminal 131, and the inner electrodes 112, 113 areelectrically connected to each other and may also be connected to thesecond contact terminal 132, so that in operation the inner electrodes112, 113 are driven by a first single-ended signal component of themodulating drive signal 151, and the outer electrodes 111, 114 aredriven by a second single-ended signal component of the modulating drivesignal 151 that is complimentary to the first single-ended component. Itwill be appreciated however that in other embodiments the fourelectrodes 111-114 in each modulating subsystems 121 may be connectedand driven in a different way, for example as defined by the relativeorientation of the modulating p/n junctions in the first and secondwaveguide arms.

Turning to FIG. 7 there is illustrated an embodiment of the modulatordevice 100 that may be substantially as described hereinabove withreference to FIG. 2 but wherein the inner electrodes 112, 113 in eachmodulating subsystem 121 are driven in counter-phase by the twocomplementary single-ended components of the differential drive signal151. Similarly, the outer electrodes 111, 114 in each modulatingsubsystem 121 are also driven in counter-phase by the two complementarysingle-ended components of the differential drive signal 151. FIG. 8illustrates a corresponding example embodiment of the photonics chip 301wherein each of the first and second terminals 131, 132 in eachmodulating section 121 connects to one inner electrode 112 or 113 andone outer electrode 111 or 114.

As stated hereinabove, the single-ended components of the electricalsignals 151 may be DC coupled or AC coupled to the respectiveelectrodes, with additional DC bias signals optionally added in at leastsome embodiments. Accordingly, in some embodiments the electricalterminals 131, 132 may be AC coupled to one or both of the respectiveelectrodes in each of the FIG. 6 and FIG. 8 implementations.

Referring now to FIG. 9, there is schematically illustrated in furtherdetail an example electrical drive circuit 450 that can be used to driveone modulating section 121 of a version of the EOM 100 having p/njunctions based HFPMs in each waveguide arm, according to one embodimentof the present disclosure. A first p/n junction 441 is formed in alength portion of the first waveguide arm 101 located within themodulating section 121, while the second p/n junction 442 is formed in alength portion of the second waveguide arm 102 located within themodulating section 121. Although illustrated with a lumped elementsymbols, the p/n junctions 441, 442 may extend along the whole length ofthe respective electrodes 111-114, or at least a portion of theirlength. In the illustrated embodiment the electrodes 111, 113 directlyconnect to the n-sides of the respective p/n junctions and may bereferred to as the cathode electrodes, or simply the cathodes. Theelectrodes 112, 114 directly connect to the p-sides of the respectivep/n junctions and may be referred to as the anode electrodes, or simplythe anodes. It will be appreciated that in other embodiments the firstand/or second p/n junctions may have a different orientation relative toeach other, for example with the p-side of the second p/n junction 442on the side of the second inner electrode 113, which will be the anodeelectrode, while the second outer electrode 114 becoming the cathodeelectrode.

The electrical drive circuit 450, which represents an embodiment of adual differential driver (DDD), includes two differential drivers 421and 422 that are DC-coupled to the first and second pairs of electrode111, 112 and 113, 114, which provide electrical connections to first andsecond p/n junctions 441, 442 respectively. In one embodiment the twodifferential drivers 451, 452 may be cross-coupled to the first andsecond electrode pairs (111, 112) and (113, 114), so that each of thetwo differential drivers 421, 422 is coupled to one electrode from eachof the first electrode pair (111, 112) and the second electrode pair(113,114). In one embodiment the two differential drivers 451, 452 maybe cross-coupled to the first and second electrode pairs (111, 112) and(113, 114), so that one of the two differential drivers 421, 422 iscoupled to the cathode electrodes of the first and second electrodepairs and the other one of the two differential drivers 421, 422 iscoupled to the anode electrodes of the first and second electrode pairs.

A common signal pre-processing circuit 410 may be optionally providedfor feeding each of the differential drivers 421, 422 with theelectrical data signal 413, or a signal related thereto. The signalpre-processing circuit 410 may be, for example, a common differentialpre-amplifier or a pre-equalizer.

The differential drivers 421 and 422 may be DC-shifted relative to eachother to convert a received electrical data signal 413, or a signalobtained therefrom by the common circuit 410, into two synchronousdifferential signals 451 and 452 with a DC shift therebetween. This DCshift V_(DC) may be selected so that both of the modulating p/njunctions 441 and 442 remain reversed biased as the drive voltageoscillates, so as to operate the p/n junctions 441, 442 in a depletionmode. The single-ended components of the two synchronous differentialsignals 451 and 452 are then cross-coupled to form two differentialdrive signals 461 and 462 that drive the respective p/n junctions 441and 442. In one embodiment the second differential drive signal 462 isan inverted version of the first differential drive signal 461, therebyaffecting a dual-differential push-pull modulation of the input light inthe modulating section 121.

In one embodiment the two single-ended complimentary components 4511 and4512 of the first differential signal 451 from the first driver 421alternate in counter-phase about a first common-mode voltage level Vcm1with a peak-to-peak voltage swing Vmax. The two complimentarysingle-ended components 4521 and 4522 of the second differential signal452 alternate with the peak-to-peak voltage swing Vmax about a secondcommon-mode voltage level Vcm2, in sync with the first differentialsignal 451. By selecting the first and second common-node voltage levelsVcm1 and Vcm2 so that the DC shift V_(DC)=(Vcm1−Vcm2) between thedifferential signals 551 and 552 is equal or greater than Vmax, so thatthe single-ended components of the first and second differential signals551, 552 alternate in non-overlapping voltage ranges, and cross-couplingthem so that the more positive signals are provided to the cathodes 111and 113 and the more negative signals—to the anodes 112 and 114, each ofthe first and second p/n junctions 441, 442 may be operated in areverse-bias regime.

As illustrated in FIG. 9 by way of example, the two single-endedcomplimentary components 4511 and 4512 of the first differential signal451 may alternate between 0V and a positive voltage Vmax, resulting inthe differential voltage changing between 0V and 2Vmax. The seconddriver 422 outputs the second differential signal 452 that is formed oftwo complimentary single-ended signal 4521 and 4522 that oscillate, insync with the first differential signal 451, between a negative voltage−Vmax and 0V resulting in the differential voltage changing between 0Vand −2Vmax and a negative DC shift V_(DC)=Vmax from the firstdifferential signal 421. The zero voltage level (0V) is assumed to bethe voltage level half-way between the higher maximum and lower minimumvoltages of the single-ended components of the differential signals 451and 452. In the illustrated embodiment, it corresponds to the electricpotential at the ground 433. The differential signals 451, 452 arecross-coupled to the first and second electrode pairs 111, 112 and 113,114 so that in each electrode pair the cathode electrode of the p/njunction 441 or 442 is fed one of the positive single-ended signals4511, 4512 and the anode electrode of the p/n junction 441 or 442 is fedone of the DC-shifted negative single-ended signals 4521, 4522. Thus, inoperation the two p/n junctions 441, 442 are reversed-biased push-pullmodulated with the voltage across each of the p/n junction oscillatingin counter-phase between 0V and Vpp=2Vmax. In the illustrated exampleembodiment this is assisted by connecting the anode electrodes 112, 114to the ground 433, and by providing a positive DC bias voltage Vb=Vmaxto the cathode-connected electrodes 111, 113, with the differentialdrivers 421, 422 implemented as current steering circuits.Alternatively, a negative DC bias voltage Vb may be provided to theanode-connected electrodes 112, 114. Furthermore, each of thetermination voltages (Vmax for cathodes and 0V for anodes in FIG. 9)could be shifted in the positive or negative direction, as long as thedifference between is adequate for maintaining the p/n junction isreverse bias. Advantageously, the illustrated dual-differentialDC-coupled modulation scheme provides an effective arm-to-armphase-modulating voltage swing equivalent to 4Vmax applied to a singleelectrode.

Turning now to FIG. 10, there is schematically illustrated an embodimentwherein the number N of the modulating subsections 121 i, i=1, . . . , Nis greater than 3; although only four such subsystems shown, it will beappreciated that there may be one or more modulating subsystems 121between a second modulating subsystem 121 ₂ and the (N−1)st modulatingsubsystem 121 _(N-1) shown in the figure. By increasing the total numberN of electrode subsystems, the electrodes in each subsystem can be madeshorter for the same modulation efficiency, which however may increasethe overall length of the device due to the greater number of gapsbetween the electrodes of adjacent modulating subsystems. Generally,EOMs with the total number of modulating subsystem N=10 and greater maybe envisioned.

Advantageously, using separately driven short electrode segments enablesto considerably increase the EOM modulation bandwidth while providing asuitably high output modulation power or the OSNR. When short enough,the electrode segments may be modeled separately as lumped elementsrather than a transmission line, and may not require terminations. FIG.15A illustrates a simplified diagram of an electrical circuit drivingone electrode segment 111, with a transistor 344 representing onechannel of the differential driver. The electrode segment 111 in thelumped model may be viewed as a capacitive load and modelled as acapacitance C_(load), yielding an equivalent circuit diagram illustratedin FIG. 15B. The modulation bandwidth BW is then controlled by the RC(resistor-capacitor) time constant τ=R·C_(load). The resistance R in theillustrated example may be estimated as approximately equal to aninverse of the transconductance g_(m) of the transistor 344, R˜1/g_(m),so that

$\begin{matrix}{{BW} = \frac{g_{m}}{C_{load}}} & (2)\end{matrix}$Thus, the modulation bandwidth of the multi-section EOM with shortelectrode segments may be substantially increased by increasing thetransconductance of the differential driver and/or reducing theelectrode capacitance C_(load), for example by reduce the segmentlength. When the multi-section electrode design is combined with thedual-differential driving architecture described hereinabove, both theoverall number N of electrode subsystems and the length l of eachelectrode segment can be reduced, leading to a reduction of power or anincrease of bandwidth.

Turning now to FIG. 11, there is schematically illustrated an embodimentof the modulation device 100 which includes an MZM 210 with multiplemodulating subsections and which may be generally as describedhereinabove with reference to FIG. 2 and FIG. 7, but with the input feedcircuit 145 additionally including a pre-equalization circuit (EQ) 180connected in the path of the input data signal 13. From the output ofthe pre-equalization circuit 180 the pre-equalized input data signal 13is fed, with suitable time delays, to the differential drivers 150, eachof which configured to drive one of the four-electrode modulatingsubsystems of an MZM 210, which are not shown in the figure but may beas described hereinabove with reference to FIGS. 2-8. Although onlythree differential drivers 150 are shown, corresponding to N=3modulating subsystems in the MZM 210 (not shown), in other embodimentsthere may be as few as two and as many as 10 or even 15 modulatingsubsystems in the MZM 210, with the corresponding number of differentialderivers 150. The pre-equalization circuit 180 may be configured toprovide a high-frequency pre-emphasis to the input data signal 13 thatis then passed to each of the electrical drive circuits 150, asillustrated in FIG. 4. This pre-emphasis is schematically illustrated inFIG. 12 at 310, and may be configured to partially compensate for thehigh-frequency roll-off of the modulation characteristic of the EOM 210,which is schematically illustrated at 303 in the same figure. Thisroll-off of the modulation characteristic of the EOM 210 may beassociated with bandwidth limitations stemming from various elements inthe path of the input data signal, including but not limited to thoseassociated with the modulating subsystem 121 and the precedingelectrical circuitry. The high-frequency pre-emphasis may also be usedto pre-compensate for bandwidth limitations at an optical receiver side.

Turning now to FIG. 13, there is schematically illustrated anotherembodiment of the modulation device 100 that may be generally asdescribed hereinabove with reference to FIGS. 2, 7, and 11, but whichincludes N pre-equalization circuits 152, with N=3 by way of example,each pre-equalization circuit 152 receiving the input data signal 13 andtransmitting its output into one of the N differential drivers 150.Similarly to the pre-equalization circuit 180 of FIG. 10, each of the Npre-equalization circuits 152 may be configured to provide ahigh-frequency pre-emphasis to the input data signal 13 destined to oneof the electrical drive circuits 150 so as to pre-compensate for thehigh-frequency roll-off of the modulation efficiency associated with thecorresponding four-electrode subsystem. One advantage of using Nseparate equalization circuits as first stages of the differentialdrivers 150 is the ability to adjust the pre-emphasis separately foreach of the modulating subsystems, which may be useful for example inembodiments wherein the length of electrodes differs between themodulating subsystems. In some embodiments, the pre-equalizationcircuits 152 of the individual modulating sections may be presenttogether with a common pre-equalization circuit 180 illustrated in FIG.12. Referring to both FIG. 12 and FIG. 13, in some embodimentsparameters of the equalization circuits 152 and/or 180 may be selectedso as to at least partially compensate for bandwidth limitations ofother elements or systems in the signal path preceding or following theEOM.

Turning now to FIG. 14, there is schematically illustrated a simplifiedcircuit diagram of a version of a pre-equalization circuit 401 and adifferential driver 402 which may be implemented using BiCMOS processand variants of which may be used in embodiments of the presentdisclosure. The pre-equalizer stage 401 equalizes a differential inputdata signal (IN+, IN−) preemptively with the expectation that the highfrequency components of the input data signal will be attenuated by theEOM. By using an emitter-follower or source-follower in the differentialdriver stage 402, BPSK and multi-level modulation formats becomepossible because the output of the driver 402 is kept linear.

Turning now to FIG. 16, there is illustrated a multi-section EOM 300with a transmitter-side high-frequency pre-emphasis (TXPE) implementedelectro-optically. The EOM 300 includes a multi-section MZM 310 withseveral modulating subsystems or sections 121 disposed one after anotheralong the length of the MZM arms in the direction of light propagation,which may be configured and operate generally as described hereinabovewith reference to EOM 100 and with reference to FIGS. 2-15. The EOM 300further includes an additional modulating subsystem or section 221 thatis configured for implementing the electro-optic TXPE and may bereferred to herein as the equalizing section 221 or equalizing subsystem221. In the shown embodiment the equalizing section 221 follows themodulating sections 121 described hereinabove, and may be generallystructurally similar to each of the modulating subsections 121, but withthe four electrodes that may in some embodiments be of a differentlength a than the respective electrodes of the modulating subsections121. In operation the equalizing subsection 221 is driven by an inverteddifferential drive signal 251 from an auxiliary differential driver 250.The inverted differential signal 251 that drives the equalizingsubsystem 250 may be referred to as the equalizing differential signal251; it is inverted relative to the modulating differential drivesignals 151, so that for example a high voltage in the differentialdrive signal 151 corresponds to a low voltage in the differentialequalizing signal 251, and vice versa, thereby affecting a modulation ofthe input light that subtracts from the modulation of the input light bythe modulating subsystem 121. The pre-equalization operation of the EOM300 may be understood by noting that ideally the RF modulating signaltravelling along the electrodes from one modulating section 121 toanother should complete the high-low and low-high transitions within oneunit interval (UI), or the duration of one symbol or bit of the inputdata signal. However, due to the bandwidth limitations the RF modulatingsignal in each UI disperses and interferes with the adjacent intervals,which could corrupt the modulated signal at the EOM output. Thisdispersion of a signal from a previous UI, termed modulation signaldispersion, may be countered by adding an inverted copy of the modulatedsignal that is suitably delayed and weighted. In the frequency domain,this may have the effect of attenuating the low frequency components andboosting the high frequency components, resulting in an effectivebandwidth expansion.

The description hereinabove with reference to FIGS. 11-14 relates toembodiments wherein the TXPE is performed in the electrical domainbefore applying the modulating RF signal to sections of the MZM.However, the electrical domain implementation of the TXPE may bechallenging at very high bit rates. In the implementation of FIG. 16,the input data signal is delayed, inverted and weighted in theelectrical domain using a delay line 240 and the differential driver250, and an inverted modulating signal is added to the light modulationprovided by the modulating subsystems 121 by means of the extrasubsystem 221. The equalization weight depends on the ratio between thelength a of the electrodes in the TXPE section 221 and the combinedelectrode lengths of the main modulating subsystems L=N·l. Accordingly,one embodiment may include selecting the electrode length a in theequalizing section 221 of the EOM 300 so as to at least partiallycompensate for the modulation signal dispersion associated with ahigh-frequency roll-off of a light modulation efficiency of themodulating subsystems. In some embodiment the electrode length a in theequalization section may also be selected to at least partiallycompensate bandwidth limitations of a signal path associated with theEOM, such as bandwidth limitations of electrical circuitry in the pathof the input data signal and in the optical signal transmission andreception systems after the EOM. In some embodiments, the equalizationweight may further be adjusted by adjusting the gain of the differentialdriver 250. The time delay T_(p) provided by the equalizing delay line240 is another adjustable parameter that may be tuned at a devicecalibration stage to optimize the equalization. This time delay T_(p)may be selected to be slightly greater than the time delay Δt that isrequired to synchronize the provisioning of the drive signal 251 withthe propagation of modulated light along the MZM arms, with thedifference τ=(T_(p)−Δt) representing a tap delay of an electro-optic FIRequalizer that the equalizing section 221 implements. By suitablyselecting the tap delay τ, the relative length of the equalizingelectrode length a/L, and optionally the gain of the equalizing driver250, the modulation bandwidth of the EOM 300 may be increased. In someembodiments one or more of these parameters may also be selected so asto at least partially compensate for bandwidth limitations of otherelements or systems in the signal path preceding or following the EOM300.

Although in the illustrated embodiment the EOM 300 includes a singleequalizing subsystem 221, in some embodiment additional equalizingelectrode subsystems may be added with corresponding delay lines toincrease the number of TXPE taps, if desired. Furthermore, although inthe illustrated embodiment the equalizing electrode subsystem 221follows the modulating electrode subsystems 121, in other embodiments itmay precede one or more of the modulating subsystems 121, and may evenbe the first electrode subsystem closest to the MZM input optical port,provided that it is driven with a suitably selected time delay relativeto the propagation of the optical modulation signal in the MZM arms. Byway of example, in embodiments wherein the first electrode subsystem 121₁ is driven with an inverted drive signal to provide the opticalpre-equalization, the first delay line 140 in the electrical feedcircuit 145 may be configured to provide a time delay T_(P) that issmaller than the time delay Δt that is associated with the lightpropagation from the equalizing subsystem 121 ₁ to the first modulatingsubsystem 121 ₂. In some embodiments of the EOM 300 there may be only asingle modulating section 121 that is either followed or preceded by theequalizing section 250, which may be of a smaller length.

Referring to FIG. 17, there is schematically illustrated an exampleelectrical drive circuit 550 of an equalizing section 250 of the EOM 300with p/n junctions based HFPMs, for an embodiment of the EOM 300 inwhich one or more of the modulating sections 121 are driven asillustrated in FIG. 9. The equalizing section 250 is similar to themodulating section 121 of FIG. 9, except that it may be of a differentlength. The electrical drive circuit 550 of the modulating section 250is substantially identical to the example electrical drive circuit 450of a modulating section 121 illustrated in FIG. 9, with functionallysame elements indicated with same reference numerals, and operatesgenerally as described hereinabove with reference to FIG. 9, except thatthe outputs of the DC-shifted differential drivers 451 and 452 areinverted, or switched, relative to their outputs in the DDD 450 of amodulating section 121 illustrated in FIG. 9.

Accordingly, for an embodiment of the EOM 300 having a modulatingsection 121 driven by the DDD 450 of FIG. 9 and an equalizing section250 driven by the DDD 550 of FIG. 17, in the modulation section 121light in the first waveguide arm 101 is modulated by the firstdifferential drive signal 461, while in the equalizing section 250 thelight in the first waveguide arm 101 is modulated by the seconddifferential drive signal 461. And vice versa, while in the modulationsection 121 light in the second waveguide arm 102 is modulated by thesecond differential drive signal 462, in the equalizing section 250 thelight in the second waveguide arm 102 is modulated by the firstdifferential drive signal 462, resulting in a push-pull modulation thatis counter-phase to the push-pull modulation in the modulating section121. Accordingly, the phase modulation of light in the equalizingsection 250 is subtracted from the phase modulation of light in themodulating section 121. It will be appreciated that in some embodiments,the gain of the differential drivers 451, 452, and the signal timing indifferent modulating and equalizing sections of a same EOM may beindependently adjustable.

With reference to FIG. 18, there is illustrated an electrical circuit ofan example dual-differential driver (DDD) 650, which represents onepossible implementation of the DC-coupled electrical drive circuits 450of FIG. 9 or 550 of FIG. 17. The DDD 650 is configured for DC-couplingto the anode/cathode electrode pairs, and the associated p/n junctionsin the first and second waveguide arms, of a modulating section or anequalization section of a sectionalized EOM of the present disclosure.In the illustrated example embodiment the DDD circuit 650 includes apre-equalization stage or circuit 620 connected between two differentialdriver circuits or stages 621, 622. The pre-equalization stage orcircuit 620 may represent a possible implementation of the commoncircuit 410 of FIGS. 9 and 17, while the differential driver circuits orstages 621, 622 may be a possible implementation of the differentialdrivers 421, 422. The three stages 620-622 may have separate supplyvoltages to reduce the chance of a breakdown or to separately setcommon-mode voltages. The DDD circuit 650 is similar to theequalizer-driver circuit of FIG. 14 except that it adds the second DDstage 622 at a different common-mode voltage level, as describedhereinbelow. The pre-equalization circuit 620 includes a pair oftransistors 631, 632 and is configured to provide a high-frequencypre-emphasis to an input differential data signal, with its single-endedcomponents labeled as “IN+” and “IN−”, received at the bases of thetransistors. The pre-equalization circuit 620, which may be of unitygain, outputs two differential signals at two different common-modevoltage levels: a higher-bias differential signal comprised of twocomplementary single-ended signals labeled “A” and “B” in the figure,which vary in-phase with the single-ended input data signals IN+ andIN−, respectively, and a lower-bias differential signal comprised of twocomplementary single-ended signals labeled “C” and “D”, with signal Cvarying in counter phase with IN+ and signal D varying in counter phasewith IN−. With the common pre-equalizer stage 620 being of unity gain,Av=1, the AC components of the four outputs A, B, C, and D are equal inamplitude. The common-mode voltage of the higher-bias differentialsignal (A,B) is defined by the supply voltage Vdd1 and a voltage dropacross the load resistors in the collector circuits of the pre-equalizer620. The common-mode voltage of the lower-bias differential signal (C,D)is defined by the base-emitter voltage drop across the transistors 631,632 and the common-mode voltage of the input data signal (IN+, IN−). Inthe context of this specification the common-node voltage of adifferential signal may also be referred to as the DC component thereof,in particularly when the common-node voltage is substantially DC, orvaries in time much slower than the data rate of the input data signal.

The two DD circuits 621, 622 are buffer circuits configured as linearamplifiers; in the shown example they are implemented as emitterfollowers but may also be implemented as collector followers in otherembodiments. The first DD circuit 621 converts the complementarysingle-ended signals (A,B) from the pre-equalizer 620 into twocomplementary single-ended signals denoted OUT2+ and OUT1−, whichalternate about an upper bias voltage level Vb1 between a maximumvoltage level V11 and a minimum voltage level V10, as illustrated inFIG. 19. The second DD circuit 622 converts the second pair ofcomplementary single-ended signals (C,D) from the pre-equalizer 620 intotwo complementary single-ended signals denoted OUT1+ and OUT2−, whichalternate about a lower bias voltage level Vb2 between a maximum voltagelevel V21≤V10 and a minimum voltage level V20, as also illustrated inFIG. 19. The DC bias shift V_(DCShift)=(Vb1−Vb2) between thedifferential drive signals 611, 612 is defined by the supply voltagesVdd1, Vdd2, and Vdd3, by the voltage drops across the load resistors inthe pre-equalizer 620, and by the base-emitter voltage drop for thetransistors 631, 632

Advantageously, the dual differential drive signals OUT1+, OUT1−, OUT2+and OUT2− provided by the equalizing DDD circuit 650 can be DC-coupledto the p/n junctions of the waveguide arms of the EOM of the presentdisclosure. The DC-shifted signals OUT1+ and OUT1− with complementary ACcomponents may be provided as a first differential drive signal fordriving one of the two anode/cathode electrode pairs of a modulation orequalization section of an EOM, while the counter-phase DC-shiftedsignals OUT2+ and OUT2− may be provided as a second differential drivesignal for driving the other of the two anode/cathode electrode pairs ofthe modulation or equalization section of the EOM in counter-phase. Bysuitably selecting circuit parameters of the DDD 650, such as Vdd1,Vdd2, Vdd3, and values of the load resistors in the pre-equalizer 620,the DC bias shift V_(DCShift) between the differential outputs (OUT1+,OUT1−) and (OUT2+, OUT2−) of DDD 650 may be selected so as to providethe desired reverse biasing and push-pull modulation of two p/njunctions of a modulating section 121 or an equalizing section 250, whenthe differential outputs of the DD 621, 622 are cross-coupled to the twop/n junctions, or the corresponding pairs of electrodes.

Referring now also to FIGS. 9 and 17 while continuing to refer to FIGS.18 and 19, by way of example in one embodiment a first pair ofcomplementary signals (OUT1+, OUT1−) from a first instance of DDD 650may be DC coupled to the first pair of electrodes 111, 112 of amodulating section 121 to drive its first modulating p/n junction 441 tomodulate the first waveguide arm 101, while a second pair ofcomplementary signals (OUT2+, OUT2−) is DC coupled to the second pair ofelectrodes 113, 114 of the modulating section 121 to drive its secondmodulating p/n junction 542 to modulate the second waveguide arm 102. InEOM embodiments with the electro-optical equalization, such as thosedescribed hereinabove with reference to FIG. 16 or FIG. 17, anotherinstance of the DDD circuit 650 in the EOM may be used to drive anequalizing section 250, with the differential outputs inverted relativeto that of the modulating section or sections of the same EOM, so thatfor example the first pair of complementary signals (OUT1+, OUT1−) is DCcoupled to the second pair of electrodes 113, 114 to drive the p/njunction 442 in the second waveguide arm 102, as shown in FIG. 17, whilethe second pair of complementary signals (OUT2+, OUT2−) is DC coupled tothe first pair of electrodes 111, 112 to drive the first p/n junction441 and modulate the first waveguide arm 101, so that the modulation ofeach waveguide arm in the equalizing section of the EOM is effectivelysubtracted from the modulation of the same waveguide arm in themodulating section of the EOM, with a relative time delay selected tocounteract the modulation dispersion.

Advantageously, the dual-differential driver 650 providing twodifferential drive signals with a DC offset between them enables properreverse biasing of the two p/n junctions of a modulating section of anEOM and driving them in a push-pull manner with a doubled voltage swingwithout the need for on-chip bypass capacitors, which may otherwise beneeded for DC blocking in embodiments where the DC bias is provided tothe electrodes separately from the modulating signal. These on-chipbypass capacitors can be relatively large and therefore would increasethe chip area and/or add high parasitic capacitance, which inembodiments described hereinabove is advantageously avoided by the useof DC-shifted differential drive signals.

It will be appreciated that the circuitry of the equalizing DDD 650 ofFIG. 18 is shown as an example only, and the DDD 650 may include othercircuitry implementing additional techniques, such as for exampleswing-limiting in order to prevent collector-emitter breakdown in theequalization and emitter-follower (EF) stage.

The above-described exemplary embodiments are intended to beillustrative in all respects, rather than restrictive, of the presentinvention. Indeed, various other embodiments and modifications to thepresent disclosure, in addition to those described herein, will beapparent to those of ordinary skill in the art from the foregoingdescription and accompanying drawings.

For example, it will be appreciated that different electro-opticdielectric materials and semiconductor materials other than silicon,including but not limited to compound semiconductor materials of groupscommonly referred to as A3B5 and A2B4, such as GaAs, InP, and theiralloys and compounds, may be used to fabricate the optical modulatorcircuits example embodiments of which are described hereinabove. Inanother example, although example embodiments described hereinabove mayhave been described primarily with reference to a waveguide modulatordevice including an MZM, it will be appreciated that principles anddevice configurations described hereinabove with reference to specificexamples may be adopted to other types of optical waveguide modulators.

Furthermore, although some of the embodiment's described hereinabove usedepletion-mode p/n junctions formed in semiconductor waveguides, otherembodiments may use forward-biased or non-biased p/n junctions, or useelectro-optic properties of the waveguide arms material that do notrequire p/n junctions to modulate the phase or amplitude of propagatinglight.

Furthermore, although some of the embodiment's described hereinabove useone or more electrical delay lines in the path of the electrical datasignal, in other embodiments such electrical delay lines may besupplemented or replaced with optical delay lines disposed in thewaveguide arms between at least some of the successive modulatingsections; such optical delays may be employed, for example, tosynchronize the propagation of the modulated light in the waveguidesarms with the delivery of the differential driver signals to themodulating segments.

Furthermore, although the dual-differential driver circuit illustratedin FIGS. 9, 17, and 18, which employs two differential drivers that areDC coupled to both the anodes and the cathodes of the p/n junction phasemodulators in the two waveguide arms to convert an input data signalinto two output differential drive signals with a DC-shift therebetween,has been described hereinabove with reference to a multi-section EOMsuch as those illustrated in FIGS. 2, 7, 10, and 16, in otherembodiments such a driving circuit may also be advantageously used innon-sectionalized EOM embodiments which employ only a single modulatingsection, or one modulating section and one equalizing section, and allsuch embodiments are within the scope of the present disclosure.

Furthermore, FIG. 20 illustrate another example EOM embodiment whereinan MZM 610 is provided with a single modulating section that is drivenby a differential driver 650. which complementary single-ended outputs651, 652 are negatively biased and DC coupled to signal electrodes 611and 614 that are connected to the anodes of the modulating p/n junctions640, 642 formed in the waveguide arms 101, 102 of the MZM 610. Thecathodes of the modulating p/n junctions 640, 642 may be connected toground 433. The negative bias of the single-ended drive signals 651, 652may be effected by using a negative supply voltage Vdd in thedifferential driver 650, which may be embodied for example asschematically illustrated in FIG. 14. The arrangement wherein thecathodes of the modulating p/n junctions are driven bynegatively-shifted complementary drive signals while the cathodes arereferenced to the ground provides advantages over a scheme wherein theanodes are connected to ground, as it enables to eliminate a bias-T fromthe driver electronics or the MZM chip. A bias-T, which is commonly usedin conventional MZM drivers, may cause signal distortion and/or loss,and is associated with higher cost and size of the modulator chip ormodule.

Furthermore in the description above, for purposes of explanation andnot limitation, specific details are set forth such as particulararchitectures, interfaces, techniques, etc. in order to provide athorough understanding of the present invention. In some instances,detailed descriptions of well-known devices, circuits, and methods areomitted so as not to obscure the description of the present inventionwith unnecessary detail. Thus, for example, it will be appreciated bythose skilled in the art that block diagrams herein can representconceptual views of illustrative circuitry embodying the principles ofthe technology. All statements herein reciting principles, aspects, andembodiments of the invention, as well as specific examples thereof, areintended to encompass both structural and functional equivalentsthereof. Additionally, it is intended that such equivalents include bothcurrently known equivalents as well as equivalents developed in thefuture, i.e., any elements developed that perform the same function,regardless of structure.

Thus, while the present invention has been particularly shown anddescribed with reference to example embodiments as illustrated in thedrawing, it will be understood by one skilled in the art that variouschanges in detail may be affected therein without departing from thespirit and scope of the invention as defined by the claims.

We claim:
 1. An optical waveguide modulator comprising: a waveguideMach-Zehnder interferometer comprising a first waveguide arm and asecond waveguide arm connected optically in parallel; a first phasemodulator comprising: a first p/n junction located in the firstwaveguide arm, a first cathode electrode extending along a length of thefirst waveguide arm in electrical communication with an n-side of thefirst p/n junction, and a first anode electrode extending along thelength of the first waveguide arm in electrical communication with ap-side of the first p/n junction; a second phase modulator comprising: asecond p/n junction located in the second waveguide arm, a secondcathode electrode extending along a length of the second waveguide armin electrical communication with an n-side of the second p/n junction,and a second anode electrode extending along the length of the secondwaveguide arm in electrical communication with a p-side of the secondp/n junction; and, a drive circuit comprising a first differentialdriver DC-coupled to the first and second cathode electrodes, and asecond differential driver DC-coupled to the first and second anodeelectrodes; wherein the drive circuit includes a common pre-equalizationcircuit configured to convert an input differential data signal into twooutput differential signals having different common-mode voltage levels,and to feed the two output differential signals to the first and seconddifferential drivers.
 2. The optical waveguide modulator of claim 1wherein the common pre-equalization circuit comprises a unit-gaintransistor pair.
 3. The optical waveguide modulator of claim 1 whereinthe common pre-equalization circuit is configured to boosthigh-frequency components of the input differential data signal.
 4. Theoptical waveguide modulator of claim 1 wherein each of the first andsecond differential drivers is configured to operate as an emitterfollower or as a collector follower.
 5. The optical waveguide modulatorof claim 1 comprising an electrical circuit configured to provide oneof: a positive DC bias voltage to the first and second cathodeelectrodes, or a negative DC bias voltage to the first and second anodeelectrodes.
 6. The optical waveguide modulator of claim 1 wherein eachof the first and second differential drivers are configured to operateas a current-steering circuit.
 7. An optical waveguide modulatorcomprising: a waveguide Mach-Zehnder interferometer comprising a firstwaveguide arm and a second waveguide arm connected optically inparallel; a first phase modulator comprising: a first p/n junctionlocated in the first waveguide arm, a first cathode electrode extendingalong a length of the first waveguide arm in electrical communicationwith an n-side of the first p/n junction, and a first anode electrodeextending along the length of the first waveguide arm in electricalcommunication with a p-side of the first p/n junction; a second phasemodulator comprising: a second p/n junction located in the secondwaveguide arm, a second cathode electrode extending along a length ofthe second waveguide arm in electrical communication with an n-side ofthe second p/n junction, and a second anode electrode extending alongthe length of the second waveguide arm in electrical communication witha p-side of the second p/n junction; and, a drive circuit comprising afirst differential driver DC-coupled to the first and second cathodeelectrodes, and a second differential driver DC-coupled to the first andsecond anode electrodes; wherein each of the cathode and anodeelectrodes comprises a first end and a second end, wherein the first andsecond differential drivers are DC coupled to the first ends ofrespective cathode or anode electrodes, and wherein: either the secondends of the anode electrodes are grounded and the second ends of thecathode electrodes are connected to a source of DC voltage, or thesecond ends of the cathode electrodes are grounded and the second endsof the anode electrodes are connected to a source of DC voltage.
 8. Theoptical waveguide modulator of claim 7, wherein the first differentialdriver and the second differential driver are configured to providedifferential drive signals with a common-mode DC offset therebetween. 9.The optical waveguide modulator of claim 7 further comprising an inputelectrical port for receiving an input data signal, wherein each of thefirst and second differential drivers is configured to linearly convertthe input data signal into the differential drive signals.
 10. Theoptical waveguide modulator of claim 7 wherein each of the first andsecond differential drivers are configured to operate as acurrent-steering circuit.
 11. The optical waveguide modulator of claim 7wherein each of the first and second differential drivers is configuredto operate as an emitter follower or as a collector follower.